Material of transistor: Si
Maximum collector power dissipation (Pc), W: 0.5
Maximum collector-base voltage |Ucb|, V: 60
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.8
Maksimalna temperatura (Tj), oC: 175
Transition frequency (ft), MHz: 250
Collector capacitance (Cc), pF: 8
Forward current transfer ratio (hFE), min: 100
The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. It was originally made in the TO-18 metal can as shown in the picture.
The 2N2222 is considered a very common transistor, and is used as an exemplar of an NPN transistor. It is frequently used as a small-signal transistor, and it remains a small general purpose transistor of enduring popularity.
The 2N2222 was part of a family of devices described by Motorola at a 1962 IRE convention.